Samsung Electronics declared a cutting-edge new 512GB DDR5 RAM module Thursday – which it said would consume 13% less electricity while performing at twice the speed of existing very good quality tech.
The South Korea-based tech organization said its industry-first item depends on another innovation could High-K Metal Gate, or HKMG, and will be supported by Intel’s forthcoming, best in class Xeon Scalable processors.
“By bringing this type of process innovation to DRAM manufacturing, we are able to offer our customers high-performance, yet energy-efficient memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities and beyond,” Young-Soo Sohn, the company’s vice president of DRAM memory planning, said in a statement.
The product is relied upon to meet supercomputing, AI and machine-learning needs before in the long run showing up in shopper PCs.
Samsung created HKMG contributes 2018 – they use hafnium rather than silicon and have traditionally been utilized in logic semiconductors, the organization said. In any case, by placing it in DRAM modules, it will save on power consumption.
The 512 GB capacity is acquired by stacking eight layers of 16 GB chips, as per the organization.
The new DDR5 modules are required to come out later this year – also Intel’s Xeon Scalable processors, codenamed “Sapphire Rapids.”
“As the amount of data to be moved, stored and processed increases exponentially, the transition to DDR5 comes at a critical inflection point for cloud datacenters, networks and edge deployments,” Intel Vice President and GM of Memory and IO Technology Carolyn Duran said in a statement.
Because of supply and demand issues, the new RAM is required to launch with a price hike of 30 to 40% prior to stabilizing, Bloomberg detailed.
Disclaimer: The views, suggestions, and opinions expressed here are the sole responsibility of the experts. No California Times journalist was involved in the writing and production of this article.